Tecnologias a Plasma para o Processamento de Materiais

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6 ECTSP1Exam: Optional
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Description

Objectives

To provide specific training in plasma technology for material processing. To present different plasma reactors, while ensuring a specific training that allows - understanding the main operation features of plasma reactors - approaching the predictive modelling of plasma reactors - operating some plasma reactors for material processing

Syllabus

1. Introduction - General characteristics of discharge plasmas - Plasma reactors for material processing: scheme and general classification 2. Capacitively Coupled Radio Frequency Reactors - Operation features - Analysis of space-charge sheaths - Homogeneous 1D model of a ccrf discharge - Match box - Power coupled to the plasma - Ion dynamics within the sheaths - Application example: pecvd of a-Si:H 3. Reactive Plasma-assisted Processing - Plasma-assisted material processing: classification and examples - Volume interactions: collision mechanisms and balance equations - Plasma- surface interaction: general mechanisms - Etching, deposition, sputtering processes

Prerequisites

To successfully reach the expected learning outcomes, students should have pre-knowledge of differential and integral calculus.

Cross Competence Component

Development of interpersonal skills in the evaluation components of seminar (involving oral communication) and laboratory (involving teamwork). Development of intrapersonal skills, at organization and methodology levels (the laboratory work is done in day(s) / hour(s) proposed by each group of students and coordinated with the INESC-MN team). 10% of evaluation components

Laboratorial Component

Conducting 1 laboratory work (in groups with maximum of 2-3 students), using INESC-MN experimental devices (http://www.inesc-mn.pt), and writing a brief report. Examples of work exploring plasma reactivity for material processing include: - PECVD thin film deposition (in clean room environment) - Deposition of magnetic thin films by magnetron sputtering - Reactive ion etching (RIE) using an ICP reactor - Ething of thin films by radio-frequency ion beam milling

Ethical Principles

All members of a group are responsible for the group’s work In any assessment, every student shall honestly disclose any help received and sources used. In an oral assessment, every student shall be able to present and answer questions about the entire assignment and solution.